XB1007-BD
Buffer Amplifier
MACOM’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses MACOM's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Product Specifications
- Part Number
- XB1007-BD
- Description
- Buffer Amplifier
- Min Frequency(MHz)
- 4000
- Max Frequency(MHz)
- 11000
- Gain(dB)
- 23.0
- Output P1dB(dBm)
- 20.00
- OIP3(dBm)
- 30.0
- Bias Current(mA)
- 100
- NF(dB)
- 4.5
- Package
- DIE
- Package Category
- Die/Bumped Die
- Rohs
- Yes
Features
- Excellent Transmit LO/Output Buffer Stage
- RoHS* Compliant
- 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
- 100% On-Wafer RF, DC and Output Power Testing
- Variable Gain with Adjustable Bias
- 4.5 dB Noise Figure
- 23.0 dB Small Signal Gain
- Compact Size
- +20.0 dBm P1dB Compression Point
- 260°C Reflow Compatible
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet