XL1010-BD

Low Noise Amplifier

MACOM’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device uses MACOM’s GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device is well suited to multiple receiver applications which require broadband performance with simple bias requirements.

Product Specifications

Part Number
XL1010-BD
Description
Low Noise Amplifier
Min Frequency(MHz)
20000
Max Frequency(MHz)
38000
Gain(dB)
17.0
Bias Current(mA)
45
NF(dB)
3.0
Package
DIE
Package Category
Die/Bumped Die

Features

  • 17.0 dB Small Signal Gain
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • 100% On-Wafer RF Testing
  • Single, Positive Bias Supply
  • 3.0 dB Noise Figure

Order from MACOM

XL1010-BD-000V
MMIC,DIE,LNA,10-40G,GEL PAK
XL1010-BD-000V Distributors