Power Amplifier

MACOM’s three stage 27.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35.5 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.