CGH21120
120 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX
The CGH21120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH21120F ideal for 1.8 ��2.3-GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH21120
- Description
- 120 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX
- Min Frequency(MHz)
- 1800
- Max Frequency(MHz)
- 2300
- Peak Output Power(W)
- 120
- Gain(dB)
- 15
- Efficiency(%)
- 35
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 15 dB Gain
- -35 dBc ACLR at 20 W PAVE
- 35 % Efficiency at 20 W PAVE
- High Degree of DPD Correction Can be Applied