CGH35060FP2
60 W; 3100 - 3500 MHz; 28 V GaN HEMT
The CGH35060P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P2 ideal for 3.1 � 3.5-GHz; S-band; pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
Product Specifications
- Part Number
- CGH35060FP2
- Description
- 60 W; 3100 - 3500 MHz; 28 V GaN HEMT
- Min Frequency(MHz)
- 3100
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 60
- Gain(dB)
- 12
- Efficiency(%)
- 60
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 60 W Peak Power Capability
- 12 dB Small Signal Gain
- 60% Drain Efficiency