CGHV96050
50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT
The CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CGHV96050
- Description
- 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT
- Min Frequency(MHz)
- 7900
- Max Frequency(MHz)
- 8400
- Peak Output Power(W)
- 50
- Efficiency(%)
- 33
- Operating Voltage(V)
- 40
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 80 W POUT typical
- >13 dB Power Gain
- 33 % Typical Linear PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop