GTRA214602FC-V1
High Power RF GaN on SiC HEMT; 490 W; 48 V; 2110 - 2170 MHz
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA214602FC-V1
- Description
- High Power RF GaN on SiC HEMT; 490 W; 48 V; 2110 - 2170 MHz
- Min Frequency(NHz)
- 2110
- Max Frequency(MHz)
- 2170
- Gain(dB)
- 14
- Efficiency(%)
- 59
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Input matched
- Asymmetric Doherty designMain: P3dB = 170 W Typ
- Peak: P3dB = 350 W Typ
- Typical pulsed CW performance: 16 ?s pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixtureGain = 15 dB @ 49 dBm
- Efficiency = 59% @ 49 dBm
- Output power at P3dB = 490 W