GTRA260502M-V1
High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 - 2675 MHz
The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced; overmold package.
Product Specifications
- Part Number
- GTRA260502M-V1
- Description
- High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 - 2675 MHz
- Min Frequency(NHz)
- 2515
- Max Frequency(MHz)
- 2675
- Gain(dB)
- 16
- Efficiency(%)
- 57
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
Features
- Asymmetric Doherty designMain: P1dB = 20.5 W Typ
- Peak: P1dB = 35 W Typ
- Typical pulsed CW performance; 2675 MHz; 48 VGain = 16.3 dB
- Efficiency = 57%
- Output power at P3dB = 44.5 W