GTRA262802FC-V2
High Power RF GaN on SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA262802FC-V2
- Description
- High Power RF GaN on SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
- Min Frequency(NHz)
- 2490
- Max Frequency(MHz)
- 2690
- Gain(dB)
- 14
- Efficiency(%)
- 54
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Typical pulsed CW performance: 2605 MHz; 48 V; 16 μs pulse width; 10% duty cycle
- Output power at P3dB 250 W
- Efficiency 62%
- Gain 14.4 dB
- Capable of handling 10:1 VSWR @48 V; 38 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS compliant