GTRA360502M-V1
High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 - 3800 MHz
The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally enhanced; overmold package.
Product Specifications
- Part Number
- GTRA360502M-V1
- Description
- High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 - 3800 MHz
- Min Frequency(NHz)
- 3400
- Max Frequency(MHz)
- 3800
- Gain(dB)
- 15
- Efficiency(%)
- 55
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
Features
- Asymmetric Doherty designMain: P1dB = 20 W Typ
- Peak: P1dB = 37 W Typ
- Typical pulsed CW performance; 3500 MHz; 48 VOutput power at P3dB = 50 W
- Gain = 15 dB
- Efficiency = 55%