GTRB097152FC-V1

High Power RF GaN on SiC HEMT 900 W, 48 V, 758 - 960 MHz

The GTRB097152FC is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Product Specifications

Part Number
GTRB097152FC-V1
Description
High Power RF GaN on SiC HEMT 900 W, 48 V, 758 - 960 MHz
Min Frequency(NHz)
758
Max Frequency(MHz)
968
Gain(dB)
18
Efficiency(%)
59
Operating Voltage(V)
48
Package Category
Earless

Features

  • Efficiency at P4dB = 73%

Technical Resources

Data Sheet

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GTRB097152FC-V1
728-960MHz, 80W 48V GaN Device
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