MA4AGSW8-1

AlGaAs PIN Diode

MACOM’s MA4AGSW8-1 is an Aluminum-Gallium- Arsenide, single pole, eight throw (SP8T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components.

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Product Specifications

Part Number
MA4AGSW8-1
Description
AlGaAs PIN Diode
Min Frequency(MHz)
50
Max Frequency(MHz)
50000
Insertion Loss (dB)
1.500
Isolation(dB)
37
IIP3(dBm)
40
CW Incident Power(W)
0.2
Package Category
Die
Package
DIE
ROHS
Yes

Features

  • Ultra Broad Bandwidth: 50 MHz to 40 GHz
  • Polymer Scratch protection
  • Silicon Nitride Passivation
  • MACOM’s unique AlGaAs hetero-junction anode technology
  • Low Current consumption: •-10mA for low loss state •+10mA for Isolation state
  • Functional Bandwidth : 50 MHz to 50 GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

Order from MACOM

MA4AGSW8-1
AlGaAs SP8T PIN Switch
Order Get a Quote Get a Sample
MASW-011081-0000WR
Switch,AlGaAs,SP8T,PINSwitch
Order Get a Quote Get a Sample

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