MAPC-A2002
GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz
The MAPC-A2002 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for base station applications and optimized for 3.4 - 4.0 GHz modulated signal operation. The device supports pulsed and linear operation with peak output power levels to 50 W (47 dBm) in a 7.0 x 6.5 mm DFN package.
Product Specifications
- Part Number
- MAPC-A2002
- Description
- GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz
- Min Frequency(MHz)
- 3400
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 50
- PSAT(W)
- 50.0
- Gain(dB)
- 16.2
- Efficiency
- 61
- Test Freq(GHz)
- 3.85
- Package
- 7.0 x 6.5 mm DFN
- Package Category
- 7mm PQFN-48LD
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
- 100 % RF Tested
- RoHS* Compliant