PTFC210202FC-V1
High Power RF LDMOS FET 28 W; 28 V; 1800 - 2200 MHz
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTFC210202FC-V1
- Description
- High Power RF LDMOS FET 28 W; 28 V; 1800 - 2200 MHz
- Min Frequency(NHz)
- 1800
- Max Frequency(MHz)
- 2700
- Gain(dB)
- 21
- Efficiency(%)
- 29
- Operating Voltage(V)
- 28
- Package Category
- Earless
Features
- Typical CW performance; 2170 MHz; 28 V; combined outputs: Output power at P1dB = 28 W; Efficiency = 62%; Gain = 20.9 dB
- Capable of handling 10:1 VSWR @28 V; 28 W (CW) output power
- Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)
- Low thermal resistance
- Pb-free and RoHS compliant