PTFC270101M-V1

High Power RF LDMOS FET 10 W; 28 V; 900 - 2700 MHz

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain; efficiency and linearity performance in a small overmolded plastic package.

Product Specifications

Part Number
PTFC270101M-V1
Description
High Power RF LDMOS FET 10 W; 28 V; 900 - 2700 MHz
Min Frequency(NHz)
900
Max Frequency(MHz)
2700
Gain(dB)
20
Efficiency(%)
60
Operating Voltage(V)
28
Package Category
Surface Mount

Features

  • Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%
  • Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = �44.9 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @ 28 V; 10 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant

Technical Resources

Data Sheet


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PTFC270101M-V1
LDMOS RF Transistor, 900?2700MHz, 10W, i