PTVA084007NF-V1
High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz
The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with a 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz.
Product Specifications
- Part Number
- PTVA084007NF-V1
- Description
- High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz
- Min Frequency(NHz)
- 500
- Max Frequency(MHz)
- 1000
- Gain(dB)
- 24
- Efficiency(%)
- 39
- Operating Voltage(V)
- 48
- Package Category
- Plastic
Features
- Target CW performance; 805 MHz; 48 V; single side: Output power at P3dB = 370 W; Efficiency = 64%; Gain = 20.8 dB
- Capable of handling 10:1 VSWR @ 48 V; 100 W (CW) output power
- Integrated ESD protection
- Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Pb-free and RoHS compliant