PXAC210552FC-V1
High Power RF LDMOS FET 55 W; 28 V; 1805 - 2170 MHz
The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design; input and output matching; and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXAC210552FC-V1
- Description
- High Power RF LDMOS FET 55 W; 28 V; 1805 - 2170 MHz
- Min Frequency(NHz)
- 1800
- Max Frequency(MHz)
- 2200
- Gain(dB)
- 17
- Efficiency(%)
- 49
- Operating Voltage(V)
- 28
- Package Category
- Earless
Features
- Asymmetric Doherty design: Main P1dB = 20 W Typ; Peak: P1dB = 35 W Typ
- CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59%
- Integrated ESD protection: Human Body Model; Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power
- Pb-free and RoHS compliant