PXAE183708NB-V1
High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz
The PXAE183708NB is a 320-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXAE183708NB-V1
- Description
- High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz
- Min Frequency(NHz)
- 1800
- Max Frequency(MHz)
- 2200
- Gain(dB)
- 16
- Efficiency(%)
- 50
- Operating Voltage(V)
- 28
- Package Category
- Plastic
Features
- Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 315 W Typ
- Typical Pulsed CW performance; 1880 MHz; 28 V; Doherty configuration; Class AB (main); Class C (peak): Output power at P1dB = 320 W; Output power at P3dB = 430 W; Drain efficiency = 60%; Gain = 13.5 dB
- Capable of handling 10:1 VSWR @ 28 V; 54 W (1C WCDMA) output power
- Pb-free; RoHS compliant