PXAE213708NB-V1
High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz
The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor intended for use in multi-standard cellular power amplifier applications in the 2110 to 2200 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXAE213708NB-V1
- Description
- High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz
- Min Frequency(NHz)
- 2110
- Max Frequency(MHz)
- 2200
- Gain(dB)
- 16
- Efficiency(%)
- 52
- Operating Voltage(V)
- 28
- Package Category
- Plastic
Features
- Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 290 W Typ
- Typical Pulsed CW performance; 2180 MHz; 28 V; Doherty configuration; class AB: Output power at P3dB = 400 W; Power Added Efficiency at P3dB = 60.3%; Power Gain = 13.7 dB
- Integrated ESD protection
- Pb-free and RoHS compliant