PXFE181507FC-V1
High Power RF LDMOS FET 175 W; 28 V; 1805 - 1880 MHz
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXFE181507FC-V1
- Description
- High Power RF LDMOS FET 175 W; 28 V; 1805 - 1880 MHz
- Min Frequency(NHz)
- 1805
- Max Frequency(MHz)
- 1880
- Gain(dB)
- 20
- Efficiency(%)
- 36
- Operating Voltage(V)
- 28
- Package Category
- Earless
Features
- Typical Pulsed CW performance; 1842 MHz; 28 V; single side; class AB test: Output power at P1dB = 175 W; Output power at P3dB = 222 W; Efficiency at P3dB = 60%; Gain = 21.3 dB
- Capable of handling 10:1 VSWR @ 28 V; 180 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant