PXFE211507FC-V1

High Power RF LDMOS FET 170 W; 28 V; 2110 - 2170 MHz

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Product Specifications

Part Number
PXFE211507FC-V1
Description
High Power RF LDMOS FET 170 W; 28 V; 2110 - 2170 MHz
Min Frequency(NHz)
2110
Max Frequency(MHz)
2170
Gain(dB)
18
Efficiency(%)
35
Operating Voltage(V)
28
Package Category
Earless

Features

  • Typical Pulsed CW performance; 2140 MHz; 28 V; single side; class AB test: Output power at P1dB = 172 W; Output power at P3dB = 208 W; Efficiency at P3dB = 64.4%; Gain = 20.3 dB
  • Capable of handling 10:1 VSWR @ 28 V; 120 W (CW) output power
  • Integrated ESD protection
  • Pb-free; RoHS compliant

Technical Resources

Data Sheet

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PXFE211507FC-V1
170W 28V 2110-2170 MHz LDMOS FET
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