CGH27015P

15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

The CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27015 ideal for VHF; Comms; 3G; 4G; LTE; 2.3 ��2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.

Product Specifications

Part Number
CGH27015P
Description
15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
15
Gain(dB)
14
Efficiency(%)
28
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Pill

Technical Resources

Data Sheet


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CGH27015P
15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz