General Purpose Broadband 40 V
MACOM's GaN HEMT devices are ideal for ultra-broadband amplifier applications that benefit from a reduction of heat-sink requirements. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This product family consists of packaged, discrete transistors and discrete bare die (designed for hybrid amplifiers and multi-function transmit/receive modules) from output powers 6 W to 70 W (CW) at 40 V that are suitable for DC – 18 GHz applications.
Part Number | Description |
---|---|
CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |