L-Band
MACOM’s GaN-on-SiC products are suited for pulsed and CW L-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks. Thereby supporting the next generation of radar and avionics systems.
Part Number | Description |
---|---|
GTVA10700 | High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz |
PTVA127002EV-V1 | High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz |
PTVA101K02EV-V1 | High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz |
CGH60060D-GP4 | 60 W; 6.0 GHz; GaN HEMT Die |
CGH60015D-GP4 | 15 W; 6.0 GHz; GaN HEMT Die |
CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
GTVA101K4 | High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz |
CGH40035 | 35 W RF Power GaN HEMT |
PTVA035002EV-V1 | High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz |
CGH27030 | 30 W, DC - 6.0 GHz, 28 V, GaN HEMT |
CGHV14250 | 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems |
CG2H30070 | 70 W; 0.5 - 3.0 GHz; GaN HEMT |
CG2H40010 | 10 W RF Power GaN HEMT |
PTVA102001EA-V1 | High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz |
PTVA104501EH-V1 | High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz |
CGH40090 | 90 W RF Power GaN HEMT |
CGHV40320D-GP4 | 320 W; 4.0 GHz; GaN HEMT Die |
CGH40025 | 25 W RF Power GaN HEMT |
PTVA12025 | High Power RF LDMOS FET 25 W; 500 - 1400 MHz |
CGH27060F | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
CMPA0527005 | 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers |
CGH55030 | 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX |
CGHV60040D-GP4 | 40 W; 6.0 GHz; GaN HEMT Die |
PTVA030121EA-V1 | High Power RF LDMOS FET 12 W; 50 V; 390 - 450 MHz |
CGH27015 | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
CG2H80120D-GP4 | 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die |
CGH40120 | 120 W RF Power GaN HEMT |
CGHV14500 | 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
CGHV14800 | 800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
CGH40006 | 6 W RF Power GaN HEMT |
CGHV27030 | 30 W; DC - 6.0 GHz; GaN HEMT |
CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
CGHV27015S | 15 W; DC - 6.0 GHz; 50 V; GaN HEMT |
PTVA047002EV-V1 | High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz |
CGHV60170D-GP4 | 170 W; 6.0 GHz; 50 V GaN HEMT Die |
CGH40010 | 10 W RF Power GaN HEMT |
CG2H40035 | 35 W RF Power GaN HEMT |
CG2H80030D-GP4 | 30 W; 8.0 GHz; GaN HEMT Die |
CGHV40200 | 200 W RF Power GaN HEMT |
CGHV40100 | 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT |
PTVA120501EA-V1 | High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz |
CGH27015P | 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
CGHV40050 | 50 W; DC - 4.0 GHz; 50 V; GaN HEMT |
CGH40180 | 180 W RF Power GaN HEMT |
CMPA0060002 | 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier |
CGHV40180 | 180 W; DC - 2 GHz; GaN HEMT |
CGH60030D-GP4 | 30 W; 6.0 GHz; GaN HEMT Die |
CGHV60075D5-GP4 | 75 W; 6.0 GHz; GaN HEMT Die |
PTVA12350 | High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz |
CMPA0060025 | 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier |
CG2H80015D-GP4 | 15 W; 8.0 GHz ; GaN HEMT Die |
GTVA12600 | High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz |
GTVB222611FAV1A | High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz |
CGH40045 | 45 W RF Power GaN HEMT |
CG2H80045D-GP4 | 45 W, 8.0 GHz, GaN HEMT Die |
CGH21240 | 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
CG2H40025 | 25 W RF Power GaN HEMT |
CG2H40045 | 45 W RF Power GaN HEMT |
PTVA04350 | High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz |
PTVA04250 | High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz |
CGH60120D-GP4 | 120 W; 6.0 GHz; GaN HEMT Die |
CGH60008D-GP4 | 8 W; 6.0 GHz; GaN HEMT Die |
CGHV40030 | 30 W; DC - 6 GHz; 50 V; GaN HEMT |
CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |
CGHV27060 | 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications |
CG2H80060D-GP4 | 60 W; 8.0 GHz; GaN HEMT Die |