L-Band

MACOM’s GaN-on-SiC products are suited for pulsed and CW L-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks. Thereby supporting the next generation of radar and avionics systems.

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Part Number Description
GTVA10700 High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz
PTVA127002EV-V1 High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz
PTVA101K02EV-V1 High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
CGH60060D-GP4 60 W; 6.0 GHz; GaN HEMT Die
CGH60015D-GP4 15 W; 6.0 GHz; GaN HEMT Die
CGHV1J006D-GP4 6 W; 18.0 GHz; GaN HEMT Die
GTVA101K4 High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
CGH40035 35 W RF Power GaN HEMT
PTVA035002EV-V1 High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz
CGH27030 30 W, DC - 6.0 GHz, 28 V, GaN HEMT
CGHV14250 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems
CG2H30070 70 W; 0.5 - 3.0 GHz; GaN HEMT
CG2H40010 10 W RF Power GaN HEMT
PTVA102001EA-V1 High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz
PTVA104501EH-V1 High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz
CGH40090 90 W RF Power GaN HEMT
CGHV40320D-GP4 320 W; 4.0 GHz; GaN HEMT Die
CGH40025 25 W RF Power GaN HEMT
PTVA12025 High Power RF LDMOS FET 25 W; 500 - 1400 MHz
CGH27060F 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
CGHV1F025 25 W; DC - 15 GHz; 40 V; GaN HEMT
CGHV1J070D-GP4 70 W; 18.0 GHz; GaN HEMT Die
CMPA0527005 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
CGH55030 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX
CGHV60040D-GP4 40 W; 6.0 GHz; GaN HEMT Die
PTVA030121EA-V1 High Power RF LDMOS FET 12 W; 50 V; 390 - 450 MHz
CGH27015 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz
CG2H80120D-GP4 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die
CGH40120 120 W RF Power GaN HEMT
CGHV14500 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
CGHV14800 800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
CGH40006 6 W RF Power GaN HEMT
CGHV27030 30 W; DC - 6.0 GHz; GaN HEMT
CGHV1J025D-GP4 25 W; 18.0 GHz; GaN HEMT Die
CGHV27015S 15 W; DC - 6.0 GHz; 50 V; GaN HEMT
PTVA047002EV-V1 High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz
CGHV60170D-GP4 170 W; 6.0 GHz; 50 V GaN HEMT Die
CGH40010 10 W RF Power GaN HEMT
CG2H40035 35 W RF Power GaN HEMT
CG2H80030D-GP4 30 W; 8.0 GHz; GaN HEMT Die
CGHV40200 200 W RF Power GaN HEMT
CGHV40100 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
PTVA120501EA-V1 High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz
CGH27015P 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
CGHV40050 50 W; DC - 4.0 GHz; 50 V; GaN HEMT
CGH40180 180 W RF Power GaN HEMT
CMPA0060002 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier
CGHV40180 180 W; DC - 2 GHz; GaN HEMT
CGH60030D-GP4 30 W; 6.0 GHz; GaN HEMT Die
CGHV60075D5-GP4 75 W; 6.0 GHz; GaN HEMT Die
PTVA12350 High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz
CMPA0060025 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
CG2H80015D-GP4 15 W; 8.0 GHz ; GaN HEMT Die
GTVA12600 High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
GTVB222611FAV1A High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz
CGH40045 45 W RF Power GaN HEMT
CG2H80045D-GP4 45 W, 8.0 GHz, GaN HEMT Die
CG2H40025 25 W RF Power GaN HEMT
CG2H40045 45 W RF Power GaN HEMT
PTVA04350 High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz
CGH21240 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX
PTVA04250 High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz
CGH60120D-GP4 120 W; 6.0 GHz; GaN HEMT Die
CGH60008D-GP4 8 W; 6.0 GHz; GaN HEMT Die
CGHV40030 30 W; DC - 6 GHz; 50 V; GaN HEMT
CGHV1F006 6 W; DC - 15.0 GHz; 40 V; GaN HEMT
CGHV27060 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications
CG2H80060D-GP4 60 W; 8.0 GHz; GaN HEMT Die