CGHV14500
500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
The CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14500 ideal for�1.2�� 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.
Product Specifications
- Part Number
- CGHV14500
- Description
- 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 500
- Gain(dB)
- 16
- Efficiency(%)
- 68
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 500 W Typical Output Power
- 16 dB Power Gain
- 68% Typical Drain Efficiency
- <0.3 dB Pulsed Amplitude Droop
- Internally pre-matched on input; unmatched output