Aerospace & Defense
MACOM enables RF technology advancements that are the backbone of wireless communication and radar systems across commercial and military aviation, air traffic control, weather services, aircraft-to-satellite communications, space exploration and more. MACOM continually provides products that offer advantages in size, weight, and power for our customers. We offer an extensive portfolio of GaN-on-SiC (packaged & bare die) and LDMOS devices.
128 Items
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GaN High Power Amplifier, 40 W 2.0 -6.0 GHz | 2000 | 6000 | 40 | 23.0 | 35 | |||||
WSM5100S New | 8.5 - 10.5 GHz, 16W GaN T/R Module | 8500 | 10500 | 16 | 28.0 | |||||
350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT | 5200 | 5900 | 350 | 11.0 | 55 | 50 | Flange, Pill | |||
70 W; 0.5 - 3.0 GHz; GaN HEMT | 500 | 3000 | 80 | 15.0 | 55 | 28 | Packaged Discrete Transistor | Flange | ||
10 W RF Power GaN HEMT | 0 | 6000 | 10 | 65 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
25 W RF Power GaN HEMT | 0 | 6000 | 25 | 62 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
35 W RF Power GaN HEMT | 0 | 6000 | 35 | 14.0 | 64 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
45 W RF Power GaN HEMT | 0 | 4000 | 45 | 55 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
120 W; RF Power GaN HEMT | 0 | 2500 | 130 | 20.0 | 70 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
15 W; 8.0 GHz ; GaN HEMT Die | 0 | 8000 | 15 | 70 | 28 | Discrete Bare Die | Die | |||
30 W; 8.0 GHz; GaN HEMT Die | 0 | 8000 | 30 | 16.5 | 65 | 28 | Discrete Bare Die | Die | ||
45 W, 8.0 GHz, GaN HEMT Die | 0 | 8000 | 45 | 15.0 | 65 | 28 | Discrete Bare Die | Die | ||
60 W; 8.0 GHz; GaN HEMT Die | 0 | 8000 | 60 | 70 | 28 | Discrete Bare Die | Die | |||
120 W; DC - 8000 MHz; 28 V; GaN HEMT Die | 0 | 8000 | 120 | 12.0 | 65 | 28 | Discrete Bare Die | Die | ||
240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX | 1800 | 2300 | 240 | 15.0 | 33 | 28 | Packaged Discrete Transistor | Flange | ||
120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE | 2500 | 2700 | 120 | 7.0 | 30 | 28 | Packaged Discrete Transistor | Flange | ||
15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz | 0 | 6000 | 15 | 14.5 | 28 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz | 0 | 6000 | 15 | 14.5 | 28 | 28 | Packaged Discrete Transistor | Pill | ||
30 W, DC - 6.0 GHz, 28 V, GaN HEMT | 0 | 6000 | 30 | 18.0 | 33 | 28 | Packaged Discrete Transistor | Flange, Pill, Surface Mount | ||
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz | 0 | 4000 | 60 | 14.0 | 27 | 28 | Packaged Discrete Transistor | Flange | ||
240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems | 2700 | 3100 | 240 | 12.0 | 60 | 28 | Packaged Discrete Transistor | Flange | ||
15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX | 0 | 6000 | 15 | 12.0 | 26 | 28 | Packaged Discrete Transistor | Pill | ||
60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX | 3300 | 3600 | 60 | 12.0 | 25 | 28 | Packaged Discrete Transistor | Pill | ||
60 W; 3100 - 3500 MHz; 28 V GaN HEMT | 3100 | 3500 | 60 | 12.0 | 60 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems | 3100 | 3500 | 240 | 11.6 | 57 | 28 | Packaged Discrete Transistor | Flange | ||
6 W RF Power GaN HEMT | 0 | 6000 | 6 | 11.0 | 65 | 28 | Packaged Discrete Transistor | Pill, Surface Mount | ||
10 W RF Power GaN HEMT | 0 | 6000 | 10 | 14.0 | 65 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
25 W RF Power GaN HEMT | 0 | 6000 | 25 | 13.0 | 62 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
35 W RF Power GaN HEMT | 0 | 6000 | 35 | 13.0 | 60 | 28 | Packaged Discrete Transistor | Flange | ||
45 W RF Power GaN HEMT | 0 | 4000 | 45 | 12.0 | 55 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
90 W RF Power GaN HEMT | 0 | 4000 | 90 | 14.0 | 55 | 28 | Packaged Discrete Transistor | Push-Pull | ||
120 W RF Power GaN HEMT | 0 | 3000 | 120 | 15.0 | 70 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
180 W RF Power GaN HEMT | 0 | 3000 | 180 | 15.0 | 70 | 28 | Packaged Discrete Transistor | Push-Pull | ||
10 W; C - band; Unmatched; GaN HEMT | 0 | 6000 | 10 | 12.0 | 60 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX | 0 | 6000 | 30 | 10.0 | 25 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
8 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 8 | 12.0 | 65 | 28 | Discrete Bare Die | Die | ||
15 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 15 | 12.0 | 65 | 28 | Discrete Bare Die | Die | ||
30 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 30 | 12.0 | 65 | 28 | Discrete Bare Die | Die | ||
60 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 60 | 12.0 | 65 | 28 | Discrete Bare Die | Die | ||
120 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 120 | 12.0 | 65 | 28 | Discrete Bare Die | Die | ||
250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems | 0 | 1600 | 250 | 18.0 | 77 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems | 1200 | 1400 | 500 | 16.0 | 68 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems | 1200 | 1400 | 800 | 16.0 | 65 | 50 | Packaged Discrete Transistor | Flange | ||
8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor | 8800 | 9600 | 300 | 12.0 | 40 | 45 | Packaged Discrete Transistor | Flange | ||
6 W; DC - 15.0 GHz; 40 V; GaN HEMT | 0 | 15000 | 6 | 7.0 | 52 | 40 | Packaged Discrete Transistor | Surface Mount | ||
25 W; DC - 15 GHz; 40 V; GaN HEMT | 0 | 15000 | 25 | 11.0 | 51 | 40 | Packaged Discrete Transistor | Surface Mount | ||
6 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 6 | 17.0 | 60 | 40 | Discrete Bare Die | Die | ||
25 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 25 | 17.0 | 60 | 40 | Discrete Bare Die | Die | ||
70 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 70 | 17.0 | 60 | 40 | Discrete Bare Die | Die | ||
15 W; DC - 6.0 GHz; 50 V; GaN HEMT | 0 | 6000 | 15 | 21.0 | 32 | 50 | Packaged Discrete Transistor | Surface Mount | ||
30 W; DC - 6.0 GHz; GaN HEMT | 0 | 6000 | 30 | 21.0 | 32 | 50 | Packaged Discrete Transistor | Surface Mount | ||
60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications | 0 | 2700 | 60 | 16.5 | 64 | 50 | Packaged Discrete Transistor | Plastic | ||
500W, 2.7 - 3.1 GHz, GaN IMFET | 2700 | 3100 | 500 | 12.7 | 60 | 50 | Packaged Discrete Transistor | Flange | ||
60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations | 2700 | 3800 | 60 | 14.5 | 67 | 50 | Packaged Discrete Transistor | Plastic | ||
120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems | 3100 | 3500 | 120 | 12.8 | 62 | 50 | Packaged Discrete Transistor | Flange | ||
150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems | 2900 | 3500 | 150 | 13.5 | 50 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems | 2900 | 3500 | 400 | 11.0 | 60 | 50 | Packaged Discrete Transistor | Flange | ||
400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems | 3300 | 3700 | 550 | 14.0 | 55 | 48 | Packaged Discrete Transistor | Flange | ||
2.75 - 3.75, 400W GaN on SiC HPA | 2750 | 3750 | 400 | 9.0 | 55 | 50 | Packaged Discrete Transistor | Flange | ||
30 W; DC - 6 GHz; 50 V; GaN HEMT | 0 | 6000 | 30 | 16.0 | 70 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
50 W; DC - 4.0 GHz; 50 V; GaN HEMT | 0 | 4000 | 50 | 16.0 | 53 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT | 0 | 3000 | 100 | 17.5 | 55 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
180 W; DC - 2 GHz; GaN HEMT | 0 | 2000 | 200 | 24.0 | 70 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
200 W RF Power GaN HEMT | 0 | 3000 | 250 | 21.0 | 75 | 50 | Packaged Discrete Transistor | Push-Pull | ||
320 W; 4.0 GHz; GaN HEMT Die | 0 | 4000 | 320 | 19.0 | 65 | 50 | Discrete Bare Die | Die | ||
200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT | 4400 | 5000 | 200 | 11.5 | 33 | 40 | Packaged Discrete Transistor | Flange | ||
70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems | 4500 | 5900 | 70 | 12.0 | 50 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
40 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 40 | 62 | 50 | Discrete Bare Die | Die | |||
75 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 75 | 7.0 | 65 | 50 | Discrete Bare Die | Die | ||
170 W; 6.0 GHz; 50 V GaN HEMT Die | 0 | 6000 | 170 | 17.0 | 65 | 50 | Discrete Bare Die | Die | ||
50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT | 7900 | 8400 | 50 | 13.0 | 33 | 40 | Packaged Discrete Transistor | Flange | ||
50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT | 7900 | 9600 | 50 | 10.0 | 55 | 40 | Packaged Discrete Transistor | Flange | ||
100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier | 7900 | 9600 | 100 | 10.0 | 45 | 40 | Packaged Discrete Transistor | Flange | ||
130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications | 8400 | 9600 | 130 | 12.2 | 42 | 40 | Packaged Discrete Transistor | Flange | ||
2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier | 0 | 6000 | 2 | 17.0 | 23 | 28 | Packaged MMIC | Flange | ||
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier | 0 | 6000 | 25 | 18.0 | 33 | 50 | Packaged MMIC | Flange, Die | ||
5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers | 500 | 2700 | 5 | 20.0 | 47 | 50 | Packaged MMIC | Flange | ||
2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications | 500 | 3000 | 2 | 18.0 | 52 | 28 | Packaged MMIC | Surface Mount | ||
MMIC Power Amplifier, 10 W, 0.5 - 6 GHz | 500 | 6000 | 10 | 19.0 | 40 | 28 | Packaged MMIC | Surface Mount | ||
0.7 - 6.0 GHz, 25W GaN MMIC HPA | 6000 | 25 | 21.0 | 36 | 28 | Packaged MMIC | Flange | |||
1.8 - 4.2 GHz, 45 W GaN MMIC HPA | 1800 | 4200 | 45 | 25.0 | 45 | 28 | MMIC Bare Die | Flange, Die | ||
60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier | 12700 | 13250 | 65 | 26.0 | 30 | 40 | MMIC Bare Die | Die | ||
90 W; 12.75 - 13.25 GHz; GaN MMIC; Power Amplifier | 12750 | 13250 | 90 | 25.0 | 30 | 40 | Packaged MMIC | Flange | ||
25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier | 13500 | 14500 | 25 | 26.0 | 16 | 40 | Packaged MMIC | Flange | ||
30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier | 13750 | 14500 | 30 | 26.0 | 25 | 40 | MMIC Bare Die | Die | ||
12.7 - 18 GHz, 1W GaN MMIC HPA | 12700 | 18000 | 1 | 23.0 | 30 | 28 | MMIC Bare Die | Surface Mount | ||
13.75 - 15.5 GHz, 60W GaN MMIC HPA | 13400 | 15500 | 60 | 28 | Packaged MMIC | Flange, Die | ||||
15.4 - 17.7 GHz, 80 W GaN MMIC HPA | 13750 | 14500 | 30 | 26.0 | 25 | 40 | MMIC Bare Die | Die | ||
17.3 - 18.4 GHz, 60W GaN MMIC HPA | 17300 | 18400 | 60 | 25.0 | 30 | 28 | Packaged MMIC | Flange | ||
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier | 2000 | 6000 | 35 | 30.0 | 35 | 28 | Packaged MMIC | Flange, Die | ||
25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier | 2500 | 6000 | 25 | 24.0 | 31 | 28 | Packaged MMIC, MMIC Bare Die | Flange, Die | ||
15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier | 2700 | 3500 | 15 | 33.0 | 45 | 50 | MMIC Bare Die | Die | ||
30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier | 2700 | 3500 | 30 | 30.0 | 45 | 50 | Discrete Bare Die | Die | ||
75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier | 2700 | 3500 | 75 | 29.0 | 61 | 28 | MMIC Bare Die | Flange, Die | ||
80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier | 2700 | 3800 | 80 | 34.0 | 54 | 50 | Packaged MMIC | Flange | ||
150W; 2.9 - 3.5 GHz; GaN MMIC | 2900 | 3500 | 150 | Packaged MMIC | ||||||
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier | 3100 | 3500 | 75 | 20.0 | 55 | 50 | Packaged MMIC | Plastic, Surface Mount | ||
40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers | 5200 | 5900 | 40 | 25.0 | 54 | 28 | Packaged Discrete Transistor | Plastic | ||
50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers | 5000 | 5900 | 60 | 23.0 | 50 | 28 | Packaged MMIC | Die | ||
High power C-band MMIC for pulsed radar operation. | 5200 | 5900 | 80 | 22.0 | 44 | 40 | Packaged MMIC | Surface Mount | ||
5.0 - 5.9 GHz, 100W GaN MMIC HPA | 5000 | 5900 | 100 | 25.0 | 50 | Packaged MMIC | Surface Mount | |||
30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier | 5500 | 8500 | 30 | 30.0 | 44 | 28 | Packaged MMIC | Flange, Die | ||
40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier | 6000 | 12000 | 40 | 25.0 | 32 | 28 | Packaged MMIC | Flange, Die | ||
6 - 18 GHz, 25W GaN MMIC HPA | 6000 | 18000 | 25 | 30.0 | 27 | 22 | Packaged MMIC | Flange, Die | ||
30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier | 7900 | 11000 | 40 | 28.0 | 42 | 28 | Packaged MMIC | Flange, Die | ||
8.5 - 10.5 GHz, 4.5W GaN MMIC HPA | 8500 | 10500 | 5 | 31.0 | 28 | Packaged MMIC | Plastic | |||
8.5 - 10.5 GHz, 20 W GaN MMIC HPA | 8500 | 10000 | 20 | 29.0 | 28 | Packaged MMIC | Die Plastic | |||
8.5 - 10.5 GHz, 40 W GaN MMIC HPA | 8500 | 10500 | 40 | 30.0 | 28 | Packaged MMIC | Die | |||
8.5 - 10.5 GHz GaN MMIC HPA | 8500 | 10500 | 80 | 29.0 | 28 | Packaged MMIC | Die, Surface Mount | |||
9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier | 9000 | 10000 | 35 | 30.0 | 45 | 28 | Packaged MMIC | Plastic | ||
35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers | 9000 | 10000 | 40 | 34.0 | 35 | 28 | Packaged MMIC | Flange | ||
25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier | 9000 | 10000 | 35 | 27.0 | 45 | 40 | Packaged MMIC | Plastic Surface Mount | ||
High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz | 960 | 1400 | 1400 | 17.0 | 68 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz | 960 | 1215 | 700 | 20.0 | 70 | 50 | Packaged Discrete Transistor | Earless, Bolt Down | ||
High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz | 1200 | 1400 | 600 | 20.0 | 63 | 50 | Packaged Discrete Transistor | Earless, Bolt Down | ||
High Power RF LDMOS FET 12 W; 50 V; 390 - 450 MHz | 390 | 450 | 12 | 25.0 | 69 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz | 390 | 450 | 450 | 18.0 | 64 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz | 470 | 806 | 250 | 19.0 | 26 | 50 | Packaged Discrete Transistor | Earless, Bolt Down | ||
High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz | 0 | 1350 | 350 | 18.0 | 30 | 50 | Packaged Discrete Transistor | Earless, Bolt Down | ||
High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz | 470 | 806 | 700 | 17.5 | 29 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz | 1030 | 1090 | 900 | 18.0 | 65 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz | 960 | 1600 | 200 | 18.5 | 60 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz | 960 | 1215 | 450 | 17.5 | 58 | 50 | Packaged Discrete Transistor | Bolt Down | ||
High Power RF LDMOS FET 25 W; 500 - 1400 MHz | 500 | 1400 | 25 | 18.0 | 54 | 50 | Packaged Discrete Transistor | Bolt Down, Surface Mount | ||
High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz | 1200 | 1400 | 50 | 17.0 | 50 | 50 | Packaged Discrete Transistor | Bolt Down, Push-Pull, Surface Mount | ||
High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz | 1200 | 1400 | 350 | 17.0 | 55 | 50 | Packaged Discrete Transistor | Earless, Bolt Down | ||
High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz | 1200 | 1400 | 700 | 16.0 | 56 | 50 | Packaged Discrete Transistor | Bolt Down | ||
2.4 - 2.5 GHz, 300W GaN Transistor | 2400 | 3000 | 300 | 17.0 | 75 | 50 | Packaged Discrete Transistor | Push-Pull |