GTVA10700
High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz
The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange.
Product Specifications
- Part Number
- GTVA10700
- Description
- High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz
- Min Frequency(MHz)
- 960
- Max Frequency(MHz)
- 1215
- Peak Output Power(W)
- 700
- Gain(dB)
- 20
- Efficiency(%)
- 70
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
Features
- Typical pulsed CW performance (class AB); 1030 MHz; 50 V; 128 ?s pulse width; 10% duty cycle; Output power P3dB = 890 W; Drain efficiency = 75%; Gain = 18 dB
- Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA IDQ;128 ?s pulse width; 10% duty cycle
- Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS-compliant