General Purpose Broadband 50 V

MACOM's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This product family consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC – 6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.

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Part Number Description
CG2H30070 70 W; 0.5 - 3.0 GHz; GaN HEMT
CGHV40320D-GP4 320 W; 4.0 GHz; GaN HEMT Die
CMPA0527005 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
CGHV60040D-GP4 40 W; 6.0 GHz; GaN HEMT Die
CGHV27030 30 W; DC - 6.0 GHz; GaN HEMT
CGHV27015S 15 W; DC - 6.0 GHz; 50 V; GaN HEMT
CGHV60170D-GP4 170 W; 6.0 GHz; 50 V GaN HEMT Die
CGHV40200 200 W RF Power GaN HEMT
CGHV40100 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
CGHV40050 50 W; DC - 4.0 GHz; 50 V; GaN HEMT
CGHV40180 180 W; DC - 2 GHz; GaN HEMT
CGHV60075D5-GP4 75 W; 6.0 GHz; GaN HEMT Die
CMPA0060025 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
PTVA04350 High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz
PTVA04250 High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz
CGHV40030 30 W; DC - 6 GHz; 50 V; GaN HEMT
CGHV27060 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications