CMPA0527005
5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 - 2.7 GHz. The transistor is available in a 6 leaded flange package.
Product Specifications
- Part Number
- CMPA0527005
- Description
- 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 5
- Gain(dB)
- 20
- Efficiency(%)
- 47
- Operating Voltage(V)
- 50
- Form
- Packaged MMIC
- Package Category
- Flange
Features
- 8 W Typical Output Power
- 20 dB Small Signal Gain
- Application Circuit for 0.5 – 2.7 GHz
- 50% Efficiency
- 50 V Operation