Communications Infrastructure
MACOM offers an extensive portfolio of GaN-on-SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G expands and matures, MACOM continues to expand and explore the advantages inherent in wide bandgap GaN-on-SiC for designers and developers seeking better performance everywhere.
| Part Number | Description |
|---|---|
| WSGPA01-V1-R3K | 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier |
| PTRA084808NF-V1 | High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz |
| WS1A3940-V1-R3K | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz |
| GTRA374902FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz |
| PXAD184218FV-V1 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
| GTRB097152FC | High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz |
| GTVA263202FC-V1 | High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz |
| PTVA092407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
| GTRA214602FC | High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz |
| PXAE213708NB | High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz |
| PTNC210604MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz |
| PTRA097008NB-V1 | High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz |
| GTRA384802FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz |
| GTVA261701FA-V1 | High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz |
| PTMC210404MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz |
| GTVA212701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz |
| CGH09120F | 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM |
| PTVA12025 | High Power RF LDMOS FET 25 W; 500 - 1400 MHz |
| PXAD214218FV-V1 | High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz |
| GTVA262711FA | High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz |
| GTVA262701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz |
| GTRB224402FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz |
| GTRA362802FC-V1 | High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz |
| PXAE183708NB | High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz |
| PTVA082407NF | High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
| GTRA412852FC-V1 | High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz |
| GTRA263902FC-V2 | High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz |
| GTRB184402FC | High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz |
| PTRA093818NF-V1 | High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz |
| PTRA087008NB-V1 | High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz |
| GTRB266908FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz |
| WS1A2639-V1-R3K | 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |
| PXAE263708NB-V1 | High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz |
| GTVA220701FA | High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz |
| GTVA261802FC-V1 | High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz |
| PXFC191507FC-V1 | High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz |
| GTRA184602FC-V1 | High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz |
| PTRA084858NF-V1 | High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz |
| PTGA090304MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz |
| GTRB424908FC | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz |
| PTRA094808NF-V1 | High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz |
| GTRB204402FC | High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz |
| GTRA364002FC | High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz |
| WS1A3640 | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz |
| GTRA262802FC | High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz |
| PXAE261908NF-V1 | High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz |
| WGC20630-V1A | Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz |
| GTRB226002FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz |
| GTRB264318FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz |
| GTRB266702FCV1A | High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz |
| WGC22630 | Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz |
| GTRA362002FC-V1 | High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz |
| GTRB206002FC | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz |
| GTVB222611FAV1A | High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz |
| GTRB246608FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz |
| PTRA095908NB-V1 | High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz |
| GTRB384608FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz |
| PTRA082808NF-V1 | High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz |
| GTRB186002FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz |
| PTVA084007NF | High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz |
| PTRA083818NF-V1 | High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz |
| GTRB267008FC-V1 | High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz |
| PTRA097058NB-V1 | High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz |
| GTRB266502FC | High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz |