WS1A3940-V1-R3K
39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz
The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
Product Specifications
- Part Number
- WS1A3940-V1-R3K
- Description
- 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz
- Min Frequency (MHz)
- 3700
- Max Frequency(MHz)
- 3980
- P3dB Output Power(W)
- 60
- Gain(dB)
- 13.0
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
Features
- Gate bias supplies for main and peaking sub-amplifiers from either side of the device
- Integrated harmonic terminations
- GaN-on-SiC technology
- Pb-free and RoHS compliant
- Recommended driver is the WSGPA01