CGHV27015S
15 W; DC - 6.0 GHz; 50 V; GaN HEMT
The CGHV27015S is an unmatched; gallium-nitride (GaN) high electron mobility�transistor (HEMT) designed specifically for high efficiency; high gain and wide�bandwidth capabilities; which makes the CGHV27015S ideal for LTE; 4G Telecom�and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable�for 3300-3500MHz; 4900-5900MHz; 700-960MHz; 1800-2200MHz; 2500-2700MHz�and extended S and C Band applications. The CGHV27015S operates from a 50 volt�rail. The transistor is available in a 3mm x 4mm; surface mount; dual-flat-no-lead�(DFN) package.
Product Specifications
- Part Number
- CGHV27015S
- Description
- 15 W; DC - 6.0 GHz; 50 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 15
- Gain(dB)
- 21
- Efficiency(%)
- 32
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Surface Mount
Features
- 15 W Typical Output Power
- 21 dB Gain at 2.5 W PAVE
- -38 dBc ACLR at 2.5 W PAVE
- 32% efficiency at 2.5 W PAVE
- High degree of APD and DPD correction can be applied