CMPA5585030
30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier
The CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage; reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC is available as a die and in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CMPA5585030
- Description
- 30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 5500
- Max Frequency(MHz)
- 8500
- Peak Output Power(W)
- 30
- Gain(dB)
- 30
- Efficiency(%)
- 44
- Operating Voltage(V)
- 28
- Form
- Packaged MMIC
- Package Category
- Die
Features
- Up to 50 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation