CMPA0060002
2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier
The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach; enabling extremely wide bandwidths to be achieved in a small footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.
Product Specifications
- Part Number
- CMPA0060002
- Description
- 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 2
- Gain(dB)
- 17.0
- Efficiency(%)
- 23
- Operating Voltage(V)
- 28
- Form
- Packaged MMIC
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- 17 dB Small Signal Gain
- 3 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
Technical Resources
Datasheet
Model Data (Sparameters)
- CMPA0060002F1 S-parameters - VDS = 28 V - IDQ = 100 mA
- CMPA0060025-F
- CMPA0060025F1 S-parameters - VDS = 50 V - Idq = 500 mA - C = 25