CMPA5259080
High power C-band MMIC for pulsed radar operation.
The CMPA5259080 is a high power; two-stage MMIC housed in a QFN package. Operating at 40V and at 25°C case temperature the device achieves over 100W of pulsed output power. The device is designed primarily for use as an output stage for highly integrated AESA radar type architecture with exceptional power capability. In addition; the high gain makes it suitable as a drive stage for a multi-device line-up using the high power IMFETs as the final stage. The device is designed to operate under long pulse conditions up to 500uS at 10% duty cycle.
Product Specifications
- Part Number
- CMPA5259080
- Description
- High power C-band MMIC for pulsed radar operation.
- Min Frequency(MHz)
- 5200
- Max Frequency(MHz)
- 5900
- Peak Output Power(W)
- 80
- Gain(dB)
- 22.0
- Efficiency(%)
- 44
- Operating Voltage(V)
- 40
- Form
- Packaged MMIC
- Package Category
- Surface Mount
- Technology
- GaN-on-SiC
Features
- >48% Typical Power Added Efficiency
- 29 dB Small Signal Gain
- 110 W Typical PSAT
- Operation up to 40 V
- High power; pulsed operation; Surface mount package
- High Breakdown Voltage
- High Temperature Operation
Technical Resources
Datasheet
Model Data (Sparameters)
- CMPA5259080S S-parameters - VDS = 32 V - Idq = 500 mA
- CMPA5259080S S-parameters - VDS = 36 V - Idq = 500 mA
- CMPA5259080S S-parameters - VDS = 40 V - Idq = 175 mA
- CMPA5259080S S-parameters - VDS = 40 V - Idq = 350 mA - C = 25
- CMPA5259080S S-parameters - VDS = 40 V - Idq = 350 mA - C = -40
- CMPA5259080S S-parameters - VDS = 40 V - Idq = 350 mA - C = 85
- CMPA5259080S S-parameters - VDS = 40 V - Idq = 700 mA