CGHV35120F
120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems
The CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CGHV35120F ideal for 2.9 - 3.8 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGHV35120F
- Description
- 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems
- Min Frequency(MHz)
- 3100
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 120
- Gain(dB)
- 13
- Efficiency(%)
- 62
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- Operating Frequency = 2.9 – 3.8 GHz
- Transient 100 ?sec – 300 ?sec @ 20% Duty Cycle
- 13 dB Power Gain @ TCASE = 85�C
- 62% Typical Drain Efficiency @ TCASE = 85�C
- Input Matched
- <0.3 dB Pulsed Amplitude Droop