MAGx-011086
GaN Amplifier 28 V, 4 W, DC - 6 GHz
Not recommended for New Design / Recommend part MAGX-011086A
The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package. The pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small PCB outline for space constrained applications. The MAGX-011086 is ideally suited for Wireless LAN, High Dynamic Range LNA’s, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM applications. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Product Specifications
- Part Number
- MAGx-011086
- Description
- GaN Amplifier 28 V, 4 W, DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 4.0
- Gain(dB)
- 9.0
- Efficiency
- >50
- Test Freq(GHz)
- 5.80
- Package
- 4x4 mm
- Package Category
- Plastic
- PSAT(dBm)
- 36
Features
- GaN on Si HEMT D-Mode Amplifier
- Suitable for Linear & Saturated Applications
- 28V Operation
- Tunable from DC - 6 GHz
- 9 dB Gain @ 5.8 GHz
- 45% Drain Efficiency @ 5.8 GHz
- 100% RF Tested
- Thermally-Enhanced 4 mm 24-Lead QFN
- RoHS* Compliant
Applications
- ISM
- Aerospace and Defense
- Defense Communications
- Wireless LAN
- Wireless Infrastructure
- High Dynamic Range LNA's
Technical Resources
Datasheet
Application Notes
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)