MASW-004100-1193
HMIC PIN Diode
MACOM's unique HMIC™(Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows for the incorporation of silicon pedestals that form the series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC™ switches exceptional low loss and remarkably high isolation through low millimeter-wave frequencies. This high performance switch is suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved.
Product Specifications
- Part Number
- MASW-004100-1193
- Description
- HMIC PIN Diode
- Min Frequency(MHz)
- 50
- Max Frequency(MHz)
- 26500
- Insertion Loss (dB)
- 0.300
- Isolation(dB)
- 65
- IIP3(dBm)
- 40
- CW Incident Power(W)
- 2
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Ultra Broad Bandwidth: 50MHz to 26GHz
- RoHS Compliant
- +33dBm Power Handling
- Reliable, Fully Monolithic, Glass Encapsulated Construction
- 50nS Switching Speed
- 0.9 Insertion Loss , 34dB Isolation at 20GHz
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
- List of recommended Drivers for MACOM Switches.pdf
Compatible Parts
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