NPA1008
GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz
Not recommended for New Design / Recommend part NPA1008A
The NPA1008 is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 x 4 mm 24-lead QFN plastic package. The NPA1008 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.
Product Specifications
- Part Number
- NPA1008
- Description
- GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz
- Min Frequency(MHz)
- 20
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 5.0
- Gain(dB)
- 12.0
- Test Freq(GHz)
- 1.90
- PSAT(dBm)
- 37
Features
- GaN on Si HEMT D-Mode Integrated Amplifier
- 100% RF Tested
- 45% Drain Efficiency
- 28 V Operation
- 50 Ω Input Matched
- Broadband Operation from 20 - 2700 MHz
- Suitable for linear and saturated applications
- Halogen-Free “Green” Mold Compound
- Lead-Free 4 x 4 mm 24-lead PQFN Package
- RoHS* Compliant