NPTB00004A
GaN Amplifier 28 V, 5 W, DC - 6 GHz
Not recommended for New Design / Recommend part NPTB00004B
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.
Product Specifications
- Part Number
- NPTB00004A
- Description
- GaN Amplifier 28 V, 5 W, DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 5.0
- Gain(dB)
- 17.0
- Efficiency
- >50
- Test Freq(GHz)
- 2.50
- Package
- SOIC8NE
- Package Category
- Plastic
- PSAT(dBm)
- 37
Features
- 57 % Drain Efficiency @ 2.5 GHz
- GaN on Si HEMT D-Mode Transistor
- Tunable from DC - 6 GHz
- Industry standard SOIC plastic package
- 28V Operation
Technical Resources
Model Data (Sparameters)
- NPTB00004A_28V_50mA.S2P
- NPTB00004A_28V_75mA.S2P
- NPTB00004A_28V_250mA.S2P
- NPTB00004A_28V_Vg-3V.S2P
- NPTB00004A_28V_100mA.S2P
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
Technology Partners
MACOM Library