NPTB00025B
GaN Amplifier 28 V, 25 W, DC - 4 GHz
Discontinued: Not recommended for New Design / Recommend part NPTB00025C
The NPTB00025 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.
Product Specifications
- Part Number
- NPTB00025B
- Description
- GaN Amplifier 28 V, 25 W, DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 25.0
- Gain(dB)
- 13.0
- Efficiency
- >50
- Test Freq(GHz)
- 3.00
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic
- PSAT(dBm)
- 44
Features
- Optimized for Broadband Operation from DC - 4000MHz
- Thermally Enhanced Industry Standard Package
- 100% RF Tested
- Characterized for Operation up to 32V
- 10W P3dB CW Broadband Power from 500-1000MHz
- 25W P3dB CW Narrowband Power
- Subject to EAR99 Export Control
- High Reliability Gold Metallization Process
- RoHS Compliant