NPTB00025C
GaN Power Transistor, 28 V, 25 W DC - 4 GHz
The NPTB00025C GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.
Product Specifications
- Part Number
- NPTB00025C
- Description
- GaN Power Transistor, 28 V, 25 W DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 25.0
- Gain(dB)
- 13.0
- Test Freq(GHz)
- 3.00
Features
- Optimized for Broadband Operation (DC - 4 GHz)
- 25 W P3dB CW Narrowband Power
- 10 W P3dB CW Broadband Power (0.05 - 1 GHz)
- Characterized for Operation up to 32 V
- 100% RF Tested
- Thermally-Enhanced Surface Mount Package
- High Reliability Gold Metallization Process
- Subject to EAR99 Export Control
- RoHS* Compliant