PTVA04350

High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz

The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with bolt-down and earless flanges. Manufactured with an advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Product Specifications

Part Number: PTVA04350
Description: High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz
Min Frequency(MHz): 0
Max Frequency(MHz): 1350
Peak Output Power(W): 350
Gain(dB): 18.0
Efficiency(%): 30
Operating Voltage(V): 50
Form: Packaged Discrete Transistor
Package Category: Earless, Bolt Down
Technology: LDMOS

Features

Input matched
Integrated ESD protection
Low thermal resistance
High gain
Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant

Technical Resources

Data Sheet

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PTVA043502EC-V1

LDMOS RF Transistor, 470?860MHz, 350W, i

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PTVA043502FC-V1

LDMOS RF Transistor, 470?860MHz, 350W, i

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